Micropipe healing in liquid phase epitaxial growth of SiC

被引:0
|
作者
Yakimova, R. [1 ]
Syväjärvi, M. [1 ]
Rendakova, S. [2 ]
Dimitriev, V.A. [2 ,3 ]
Henry, A. [1 ]
Janzén, E. [1 ]
机构
[1] Dept. of Phys. and Msrmt. Technology, Linköping University, SE-581 83 Linköping, Sweden
[2] TDI, Inc., 8660 Dakota Drive, Gaithersburg, MD 20877, United States
[3] Howard University, MSRCE, Washington, DC, United States
关键词
D O I
暂无
中图分类号
学科分类号
摘要
10
引用
收藏
相关论文
共 50 条
  • [1] Micropipe healing in liquid phase epitaxial growth of SiC
    Yakimova, R
    Syväjärvi, M
    Rendakova, S
    Dimitriev, VA
    Henry, A
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 237 - 240
  • [2] Micropipe and macrodefect healing in SiC crystals during liquid phase processing
    Epelbaum, BM
    Hofmann, D
    Hecht, U
    Winnacker, A
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 307 - 310
  • [3] Micropipe and macrodefect healing in SiC crystals during liquid phase processing
    Epelbaum, B.M.
    Hofmann, D.
    Hecht, U.
    Winnacker, A.
    Materials Science Forum, 2001, 353-356 : 307 - 310
  • [4] Liquid phase epitaxial growth of SiC
    Syväjärvi, M
    Yakimova, R
    Radamson, HH
    Son, NT
    Wahab, Q
    Ivanov, IG
    Janzén, E
    JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) : 147 - 154
  • [5] Micropipe healing in SiC wafers by liquid-phase epitaxy in Si-Ge melts
    Filip, O
    Epelbaum, B
    Bickermann, M
    Winnacker, A
    JOURNAL OF CRYSTAL GROWTH, 2004, 271 (1-2) : 142 - 150
  • [6] Effect of growth condition on micropipe filling of 4H-SiC epitaxial layer
    Kojima, K.
    Nishizawa, S.
    Kuroda, S.
    Okumura, H.
    Arai, K.
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E549 - E554
  • [7] On the mechanisms of micropipe and macrodefect transformation in SiC during liquid phase treatment
    Epelbaum, BM
    Hofmann, D
    JOURNAL OF CRYSTAL GROWTH, 2001, 225 (01) : 1 - 5
  • [8] Growth of low micropipe density SiC wafers
    Powell, A
    Wang, SP
    Brandes, G
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 437 - 440
  • [9] Specific features of the liquid-phase epitaxial growth of SiC epilayers in vacuum
    Bauman, DA
    Gavrilin, AV
    Ivantsov, VA
    Morozov, AM
    Kuznetsov, NI
    SEMICONDUCTORS, 2001, 35 (10) : 1132 - 1134
  • [10] Specific features of the liquid-phase epitaxial growth of SiC epilayers in vacuum
    D. A. Bauman
    A. V. Gavrilin
    V. A. Ivantsov
    A. M. Morozov
    N. I. Kuznetsov
    Semiconductors, 2001, 35 : 1132 - 1134