Real-time simulation of power electronic devices

The voltage spike, current spike and power loss of power electronic devices in the switch process are important factors of reliability of power electronic devices and the power electronic system. The real-time simulation research on the power electronic device is studied using the basic switching cell of an insulated gate bipolar transistor (IGBT) as an example for its mature technique and popularity. A function model for power electronic device real-time simulation is developed according to the switching characteristics and current commutating process. The real-time simulation of power electronic devices is realized in the field programmable gate array (FPGA). The results are able to reflect the key indexes of voltage spike, current spike and power loss in the switching process. © 2013 State Grid Electric Power Research Institute Press.