Effects of boron incorporation on the structural, optical and electrical properties of sol-gel-derived ZrO2 gate dielectrics

被引：0

作者：

20153401188928

机构：

[1] Xiao, D.Q.

[2] He, G.

[3] Jin, P.

[4] Gao, J.

[5] Zhang, J.W.

[6] Chen, X.F.

[7] Zheng, C.Y.

[8] Zhang, M.

[9] Sun, Z.Q.

来源：

He, G. (ganghe01@issp.ac.cn) | 1600年 / Elsevier Ltd卷 / 649期

关键词：

The effect of boron (B) doping on the microstructure; band gap energy and electrical properties of ZrO2 gate dielectrics deposited by sol-gel method at low temperature were systemically investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet-visible spectroscopy; the thicknesses and optical constants of ZrO2 gate dielectrics have been determined precisely. The B incorporation dependent electrical properties of ZrO2 films were determined by capacitance-voltage (C-V) and leakage current density-voltage (J-V) measurements. The dominant conduction mechanisms of Al/B:ZrO2/n-Si MOS structures have been discussed systematically in detail. As a result; the optimized B incorporation content has been obtained to achieve ZrO2 gate dielectrics with high quality. © 2015 Elsevier B.V. All rights reserved;

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