An online junction temperature detection circuit for SiC MOSFETs considering threshold voltage drift compensation

被引：1
作者：
Wang, Ruoyin [1 ,2 ]
Zhu, Xiaoyong [2 ]
机构：
[1] Hubei Univ Technol, Sch Mech Engn, Hubei Key Lab Modern Mfg Qualt Engn, Wuhan, Hubei, Peoples R China
[2] Jiangsu Univ, Sch Elect & Informat Engn, Zhenjiang 212013, Jiangsu, Peoples R China
来源：
MICROELECTRONICS RELIABILITY | 2024年 / 163卷
关键词：
SiC MOSFETs; Junction temperature; Online detection; Threshold voltage; Drift compensation; INSTABILITY; CONVERTERS;
D O I：
10.1016/j.microrel.2024.115548
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Temperature is the main factor affecting the reliability of SiC MOSFETs. Therefore, real-time monitoring technology for junction temperature has become a prerequisite for implementing thermal management strategies. Based on the temperature sensitive electrical parameter method, this paper first determines the temperature dependence of the threshold voltage Vth. Secondly, a SiC MOSFETs junction temperature detection circuit based on threshold voltage is constructed using a T flip-flop. Furthermore, based on this circuit, the junction temperature detection of SiC MOSFETs is achieved. This method has a simple circuit structure, does not require intrusion into the device interior, and can be measured online. Then, an inverter experimental platform is built, and the junction temperature detection performance of the proposed method is tested both offline and online. The experimental results showed that the proposed method has good sensitivity and linearity(-5 mV/degrees C), and the error is less than 3 degrees C. Finally, this paper further proposes a threshold voltage drift compensation strategy flow for the junction temperature model to correct the detection error caused by aging.
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页数：9
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