Improvement of current gain in triple ion implanted 4H-SiC bipolar junction transistor with etched extrinsic base regions

被引：0

作者：

Tajima T. ^{[1
]}

Nakamura T. ^{[1
]}

Satoh M. ^{[1
]}

Nakamura T. ^{[1
]}

机构：

[1] Department of Electronics, Electrical and Computer Engineering, Research Center for Micro-Nano Technology, Hosei University, Koganeishi, Tokyo 184-0003, 3-11-15, Midoricho

来源：

IEEJ Transactions on Electronics, Information and Systems | 2010年 / 130卷 / 12期

关键词：

4H-SiC; Bipolar junction transistors (BJTs); Ion implantation;

D O I：

10.1541/ieejeiss.130.2188

中图分类号：

学科分类号：

摘要：

We demonstrate triple ion implanted 4H-SiC bipolar junction transistor (BJT). By etching the extrinsic base regions using inductively coupled plasma dry etching, the characteristics of triple ion implanted 4H-SiC BJT were significantly improved. Maximum common emitter current gain was improved from 1.7 to 7.5. © 2010 The Institute of Electrical Engineers of Japan.

引用

页码：2188 / 2191+12

共 14 条

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