Optical and structural properties of thin films of ZnS grown by atomic layer epitaxy

被引：5

作者：

Godlewski, M. ^{[1
]}

Guziewicz, E. ^{[1
]}

Szczerbakow, A. ^{[1
]}

Kopalko, K. ^{[1
]}

Dynowska, E. ^{[1
]}

Phillips, M.R. ^{[2
]}

Cricenti, A. ^{[3
]}

Girasole, M. ^{[3
]}

机构：

[1] Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

[2] Microstructural Analysis Unit, University of Technology, Sydney, Australia

[3] Institut di Struttura della Materia-CNR, Rome, Italy

来源：

Journal of Wide Bandgap Materials | 2001年 / 9卷 / 1-2期

关键词：

Crystal growth - Crystalline materials - Electroluminescence - Optical resolving power - Optoelectronic devices - Thin films - Vapor phase epitaxy;

D O I：

10.1106/152451102025830

中图分类号：

学科分类号：

摘要：

Monocrystalline films of sphalerite-type ZnS are produced on (001) GaAs substrates by atomic layer epitaxy (ALE) in a gas flow system employing reactions of three different types. Properties of these ZnS films are compared. The best quality ZnS layers are obtained using either zinc chloride or elemental zinc as source of cation and H2S vapors as source of sulfur. These layers show flat surfaces and good spectral properties. © 2002 Sage Publications.

引用

页码：55 / 63