Improving the Performance of AlGaInP Laser Diode by Oxide Annealing

被引：0
|
作者：
Hwang, Jun-Dar [1 ]
Lin, Chao-Yang [1 ]
机构：
[1] Department of Electrical Engineering, Da-Yeh University, 112 Shan-Jiau Rd., Da-Tsuen, Changhua, Taiwan
来源：
| 2003年 / Japan Society of Applied Physics卷 / 42期
关键词：
Annealing - Epitaxial growth - Metallorganic chemical vapor deposition - Quantum efficiency - Semiconductor doping - Semiconductor lasers - Silica - Thermal effects;
D O I：
10.1143/jjap.42.l1116
中图分类号：
学科分类号：
摘要：
AlGaInP laser diodes (LDs) with and without the post SiO2 deposition thermal annealing process have been fabricated. It was found that we could reduce threshold current (Ith) and achieve higher values of slope efficiency (SE) and external quantum efficiency of the LDs by introducing such a post SiO2 deposition thermal annealing process. Characteristic temperature (To) observed from the LDs with the post SiO2 deposition thermal annealing process was also found to be higher.
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