The effects of inorganic buffer layers on the flexible indium-tin-oxide films' photoelectric properties and bending resistance performance

被引：0
|
作者：
Li Y. [1 ]
Yu Z. [1 ]
Leng J. [1 ]
Xue W. [1 ]
Xia F. [1 ]
Ding Z. [1 ]
机构：
[1] The Laboratory of Thin Film and Display Technology, School of Optoelectronics, Beijing Institute of Technology
来源：
Guangxue Xuebao/Acta Optica Sinica | 2010年 / 30卷 / 04期
关键词：
Bending resistance performance; Flexible ITO thin film; Inorganic buffer layers; Ion assisted deposition(IAD); Photoelectric properties;
D O I：
10.3788/AOS20103004.1205
中图分类号：
学科分类号：
摘要：
Inorganic buffer layers and transparent conductive In2O3:SnO2 (ITO) films were deposited sequentially on flexible polyethylene terephthalate (PET) substrates by ion assisted deposition(IAD) at room temperature. The effects of inorganic buffer layers on the photoelectric properties and bending resistance performance of flexible ITO films were investigated detailedly. The results show that the effects of SiO2, TiO2, Ta2O5 and Al2O3 buffer layers on the sheet resistance, optical transmittance and bending resistance performance of ITO films are different. Adding SiO2 to reduce the sheet resistance of ITO films is the best proposal, of which the reducing rate reaches 29.8%, but adding Al2O3 is inadvisable, of which the reducing rate is only 5.6%; The visible light transmittance of ITO films with Ta2O5 is optimal, of which the average transmittance is over 85%, and the average transmittance of ITO films with SiO2 is above 80%. It is found that the ITO films with SiO2 have better resistance stabilities compared to ones with TiO2 when the ITO films are bent at the same bending radius, but the ITO films with SiO2 have worse resistance stabilities compared to ones with TiO2 when the ITO films are inwards bent at the bending radius of R=0.8 cm and R=1.2 cm.
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页码：1205 / 1210
页数：5
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