Effects of N2O plasma annealing on the characteristics of tantalum oxide thin films deposited on TaN/Ta electrode

被引：0

作者：

Liu, Tzu-Ping ^{[1
]}

Huang, Ya-Huang ^{[1
]}

Chang, Chich-Shang ^{[1
]}

Wu, Tai-Bor ^{[1
]}

机构：

[1] Dept. of Mat. Sci. and Engineering, National Tsing Hua University, 101, Sec. 2, Hsinchu 300, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 12期

关键词：

537.1 Heat Treatment Processes - 701.1 Electricity: Basic Concepts and Phenomena - 714.2 Semiconductor Devices and Integrated Circuits - 802.2 Chemical Reactions - 804.2 Inorganic Compounds - 932.3 Plasma Physics;

D O I：

10.1143/jjap.41.7426

中图分类号：

学科分类号：

摘要：

引用

页码：7426 / 7432