Fast and low-power thermooptic switch on thin silicon-on-insulator

被引：215
作者：
Espinola, R.L. [1 ]
Tsai, M.-C. [1 ]
Yardley, James T. [2 ]
Osgood Jr., R.M. [1 ]
机构：
[1] Microelectronics Sciences Lab., Columbia University, New York
[2] Center for Integrated Sci. and Eng., Columbia University, New York
来源：
IEEE Photonics Technology Letters | 2003年 / 15卷 / 10期
关键词：
High-index contrast; Integrated optics; Optical switching; Silicon-on-insulator (SOI); Thermooptic; Unibond;
D O I：
10.1109/LPT.2003.818246
中图分类号：
学科分类号：
摘要：
We have designed and fabricated Mach-Zehnder interferometer thermooptic switches using a wafer-bonded thin-silicon-on-insulator materials system. The thermally switched devices use single-mode strip waveguides with dimensions 0.26 × 0.6 μm2, operating at a wavelength of λ = 1.55 μm. Useful device characteristics include a low switching power, 50 mW, and a fast rise time of <3.5 μs. These results demonstrate the potential of this high-index-contrast materials system for the design of fast and low-power thermooptic switches and as an active element in photonic integrated circuits.
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页码：1366 / 1368
页数：2
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