Bias Stress Stability of Electric-double-layer ZnO Thin-film Transistor

被引：0
|
作者：
Wang C. [1 ,2 ]
Liu Y.-R. [3 ]
Peng Q. [1 ]
Huang H. [3 ]
机构：
[1] School of Ocean, Shanwei Institute of Technology, Shanwei
[2] Novel Energy Materials & Catalysis Research Center, Shanwei Marine Industry Institute, Shanwei
[3] School of Microelectronics, South China University of Technology, Guangzhou
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2022年 / 43卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Bias stress; Electric double layer; Stability; Thin-film transistor; Zinc oxide;
D O I：
10.37188/CJL.20210324
中图分类号：
学科分类号：
摘要：
The use of environmentally friendly and degradable natural biomaterials to make functional devices has attracted more and more attention. Low-operating-voltage electric-double-layer(EDL) ZnO thin-film transistor(ZnO-TFT) was prepared by radio frequency magnetron sputtering by using natural albumen as a gate dielectric layer and ZnO as an active layer. The electrical characteristics of EDL ZnO-TFT was characterized, and the stability and its physical mechanism of the device under gate-bias and drain-bias stresses were investigated. The ZnO-TFT shows good electrical properties with a saturation mobility of 5.99 cm2/(V•s), a threshold voltage of 2.18 V, a subthreshold swing of 0.57 V/dec, an on/off current ratio of 1.2×105, and an operating voltage of less than 3 V. Bias-stress stability analysis indicated that the electrical properties of the ZnO-TFT have obvious instability under the gate and drain bias stresses. We believe that the change of electrical properties caused by gate bias stress may come from the positive charge accumulation near the gate dielectric and the interface, the charge discharge effect and the composite effect of new trap states; the change of electrical properties caused by drain bias stress may come from the oxygen vacancy caused by Joule heat and the electron trap in the channel. © 2022, Science Press. All right reserved.
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页码：129 / 136
页数：7
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