Comparison the effect of t-BuOH and H 2O as O precursors on ZnO films grown by MOCVD method

被引：1

作者：

National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China ^{[1
]}

机构：

[1] National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University

来源：

Faguang Xuebao | / 6卷 / 665-668期

关键词：

MOCVD; O precursor; t-BuOH; ZnO;

D O I：

10.3788/fgxb20123306.0665

中图分类号：

学科分类号：

摘要：

The behaviors of ZnO films using t-BuOH and H 2O as oxygen precursors were investigated. Despite the fact that both t-BuOH and H 2O are of lower activity, the ZnO epilayer has a higher growth rate when t-BuOH is used as oxygen precursor, due to its more effective prevention of the gas phase pre-reaction. Compared with H 2O, ZnO epilayer get a better crystal quality by using t-BuOH as oxygen precursor. And the Hall mobility up to 37.0 cm 2·V -1·s -1 is achieved in the flim where t-BuOH is used as oxygen precursor. The research shows that t-BuOH is more suitable for oxygen precursor of the MOCVD growth of ZnO epilayer.

引用

页码：665 / 668

页数：3

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