Blistering of silicon crystals by low keV hydrogen and helium ions

被引:0
|
作者
Qian, C.
Terreault, B.
机构
来源
| 1600年 / American Institute of Physics Inc.卷 / 90期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] SPUTTERING OF NIOBIUM BY NIOBIUM, HYDROGEN, DEUTERIUM, AND HELIUM IONS IN 10-KEV TO 80-KEV ENERGY RANGE
    SUMMERS, AJ
    FREEMAN, NJ
    DALY, NR
    JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 4774 - &
  • [22] HELIUM IRRADIATIONS OF COPPER AT 1 TO 25 KEV - RANGE PROFILES, REEMISSION, AND BLISTERING
    TERREAULT, B
    STJACQUES, RG
    VEILLEUX, G
    MARTEL, JG
    LECUYER, J
    BRASSARD, C
    CARDINAL, C
    CANADIAN JOURNAL OF PHYSICS, 1978, 56 (02) : 235 - 247
  • [23] ENERGY-SPECTRA AND CHARGE FRACTIONS FOR KEV HYDROGEN AND HELIUM BACKSCATTERED FROM SILICON
    AGAMY, SA
    ROBINSON, JE
    SURFACE SCIENCE, 1979, 90 (02) : 648 - 660
  • [24] Blistering/exfoliation kinetics of GaAs by hydrogen and helium implantations
    Woo, H. J.
    Choi, H. W.
    Kim, G. D.
    Kim, J. K.
    Kim, K. J.
    SURFACE & COATINGS TECHNOLOGY, 2009, 203 (17-18): : 2370 - 2374
  • [25] HYDROGEN AND HELIUM IONS
    BAUER, SJ
    ANNALES DE GEOPHYSIQUE, 1966, 22 (02): : 247 - +
  • [26] Recombination of silicon ions by electron capture from atomic hydrogen and helium
    Bacchus-Montabonel, MC
    THEORETICAL CHEMISTRY ACCOUNTS, 2000, 104 (3-4) : 296 - 301
  • [27] Electronic interaction of slow hydrogen, helium, nitrogen, and neon ions with silicon
    Ntemou, Eleni
    Lohmann, Svenja
    Holenak, Radek
    Primetzhofer, Daniel
    PHYSICAL REVIEW B, 2023, 107 (15)
  • [28] Recombination of silicon ions by electron capture from atomic hydrogen and helium
    M. C. Bacchus-Montabonel
    Theoretical Chemistry Accounts, 2000, 104 : 296 - 301
  • [29] Investigation of surface blistering of hydrogen implanted crystals
    Bedell, SW
    Lanford, WA
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (03) : 1138 - 1146
  • [30] SOME FEATURES OF NICKEL BLISTERING UNDER IRRADIATION WITH HELIUM IONS
    KROTOV, VI
    LEBEDEV, SY
    SOVIET ATOMIC ENERGY, 1978, 44 (04): : 405 - 407