Preparation of the low cost SiC wafer by the layer splitting method and the wafer direct bonding method

[1] Suda J., Okuda T., Uchida H., Minami A., Hatta N., Sakata T., Kawahara T., Yagi K., Kurashima Y., Takagi H., Characterization of 4H-SiC Homoepitaxial Layers Grown on 100-mm-diameter 4H-SiC/poly-SiC Bonded Substrates, (2013)

[2] Hatta N., Minami A., Sakata T., Kawahara T., Yagi K., Uchida H., Okuda T., Suda J., Kurashima Y., Takagi H., Low-resistance 4H-SiC/poly-SiC Bonded Interfaces Fabricated by a Surface-Activated Bonding Method, (2014)

[3] Takagi H., Kikuchi K., Maeda R., Chung T.R., Suga T., Surface activated bonding of silicon wafers at room temperature, Applied Physics Letters, 68, 16, pp. 2222-2224, (1996)

[4] Bruel M., Application of hydrogen ion beams to Silicon On Insulator material technology, Nuclear Instruments and Methods in Physics Research B, 108, pp. 313-319, (1996)

[1] Suda J., Okuda T., Uchida H., Minami A., Hatta N., Sakata T., Kawahara T., Yagi K., Kurashima Y., Takagi H., Characterization of 4H-SiC Homoepitaxial Layers Grown on 100-mm-diameter 4H-SiC/poly-SiC Bonded Substrates, (2013)

[2] Hatta N., Minami A., Sakata T., Kawahara T., Yagi K., Uchida H., Okuda T., Suda J., Kurashima Y., Takagi H., Low-resistance 4H-SiC/poly-SiC Bonded Interfaces Fabricated by a Surface-Activated Bonding Method, (2014)

[3] Takagi H., Kikuchi K., Maeda R., Chung T.R., Suga T., Surface activated bonding of silicon wafers at room temperature, Applied Physics Letters, 68, 16, pp. 2222-2224, (1996)

[4] Bruel M., Application of hydrogen ion beams to Silicon On Insulator material technology, Nuclear Instruments and Methods in Physics Research B, 108, pp. 313-319, (1996)