Investigation on optical properties of p-type lightly doped porous silicon

被引:0
|
作者
机构
[1] Zhou, Cheng-Yao
[2] Li, Dong-Sheng
[3] Yang, De-Ren
[4] Que, Duan-Lin
来源
Yang, D.-R. (mseyang@zju.edu.cn) | 2005年 / Zhejiang University卷 / 39期
关键词
Anodic current - Anodization time - HF concentration - Quantum effect theory;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Structural, optical and electronic properties of P doped p-type ZnO thin film
    Su, S. C.
    Yang, X. D.
    Hu, C. D.
    PHYSICA B-CONDENSED MATTER, 2011, 406 (08) : 1533 - 1535
  • [42] THERMAL BREAKDOWN IN HEAVILY DOPED P-TYPE SILICON
    GORDEEV, GV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 804 - 805
  • [43] Ferromagnetic states of p-type silicon doped with Mn
    Z. A. Yunusov
    Sh. U. Yuldashev
    Kh. T. Igamberdiev
    Y. H. Kwon
    T. W. Kang
    M. K. Bakhadyrkhanov
    S. B. Isamov
    N. F. Zikrillaev
    Journal of the Korean Physical Society, 2014, 64 : 1461 - 1465
  • [44] Ferromagnetic states of p-type silicon doped with Mn
    Yunusov, Z. A.
    Yuldashev, Sh. U.
    Igamberdiev, Kh. T.
    Kwon, Y. H.
    Kang, T. W.
    Bakhadyrkhanov, M. K.
    Isamov, S. B.
    Zikrillaev, N. F.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 64 (10) : 1461 - 1465
  • [45] Influence of Anodizing Parameters on the Electrochemical Characteristics and Morphology of Highly Doped P-type Porous Silicon
    Mebed, Abdelazim M.
    Abd-Elnaiem, Alaa M.
    De Malsche, Wim
    SILICON, 2021, 13 (03) : 819 - 829
  • [46] Macropore formation on medium doped p-type silicon
    Lust, S
    Lévy-Clément, C
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 182 (01): : 17 - 21
  • [47] Influence of Anodizing Parameters on the Electrochemical Characteristics and Morphology of Highly Doped P-type Porous Silicon
    Abdelazim M. Mebed
    Alaa M. Abd-Elnaiem
    Wim De Malsche
    Silicon, 2021, 13 : 819 - 829
  • [48] Macropore formation on medium doped p-type silicon
    Lust, S.
    Lévy-Clément, C.
    2000, (182):
  • [49] DEFECT LEVELS IN P-TYPE SILICON DOPED WITH MANGANESE
    EVWARAYE, AO
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3813 - 3818
  • [50] TUNNELING SPECTROSCOPY IN HIGHLY DOPED P-TYPE SILICON
    CULLEN, DE
    COMPTON, WD
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 414 - &