Studies on ultrathin silicon oxide films and their current problems

被引：0
|
作者：
Hattori, T. [1 ]
机构：
[1] Dept. of Elec. and Electronic Eng., Faculty of Engineering, Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, 158-8557 Tokyo, Japan
来源：
Shinku/Journal of the Vacuum Society of Japan | 2001年 / 44卷 / 08期
关键词：
All Open Access; Bronze;
D O I：
10.3131/jvsj.44.695
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：695 / 700
相关论文
共 31 条
  • [1] SPECTROSCOPIC AND ELECTROCHEMICAL STUDIES OF ELECTROCHROMIC HYDRATED NICKEL OXIDE FILMS.
    Yu, P.C.
    Nazri, G.
    Lampert, C.M.
    1600, (16): : 1 - 3
  • [2] PLASMA DEPOSITION AND CHARACTERIZATION OF THIN SILICON-RICH SILICON NITRIDE FILMS.
    Nguyen, S.V.
    Fridmann, S.
    Journal of the Electrochemical Society, 1987, l34 (09) : 2324 - 2329
  • [3] Orientation control and angle-resolved photoemission studies of organic epitaxial thin films on bismuth-terminated silicon surfaces
    Ohtomo, M., 1600, Vacuum Society of Japan (56): : 1 - 10
  • [4] Nanomechanical spectroscopy of ultrathin silicon nitride suspended membranes☆
    Jugade, Sanket S.
    Aggarwal, Anuj
    Naik, Akshay K.
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2021, 94 (02)
  • [5] Correlation between thickness dependent nanoscale structural chemistry and superconducting properties of ultrathin epitaxial NbN films
    Licata, Olivia G.
    Sarker, Jith
    Bachhav, Mukesh
    Roy, Pinku
    Wei, Xiucheng
    Yang, Zihao
    Patibandla, Nag
    Zeng, Hao
    Zhu, Mingwei
    Jia, Quanxi
    Mazumder, Baishakhi
    Materials Chemistry and Physics, 2022, 282
  • [6] PROPERTIES OF POROUS ANODIC ALUMINUM-OXIDE FILMS AS MEMBRANES
    ITAYA, K
    SUGAWARA, S
    ARAI, K
    SAITO, S
    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN, 1984, 17 (05) : 514 - 520
  • [7] FILM THICKNESS DEPENDENCE OF SILICON REDUCED LPCVD TUNGSTEN ON NATIVE OXIDE THICKNESS
    BUSTA, HH
    TANG, CH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1195 - 1200
  • [8] Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate
    State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou
    510640, China
    不详
    400039, China
    不详
    510006, China
    Membr., 2022, 6
  • [9] Cutting Edge Technologies by Silicon- and Silicon Oxide-Based Nanostructures
    Scaramuzzo, Francesca A.
    Gonzalez-Campo, Arantzazu
    Dell'Era, Alessandro
    JOURNAL OF NANOMATERIALS, 2021, 2021
  • [10] AN OVERVIEW OF MUNICIPAL SOLID WASTE MANAGEMENT IN POLAND. THE CURRENT SITUATION, PROBLEMS AND CHALLENGES
    Alwaeli, Mohamed
    ENVIRONMENT PROTECTION ENGINEERING, 2015, 41 (04): : 181 - 193
1234