An application of a physics-based IGBT model to a protection circuit for short-circuit conditions

被引：0

作者：

Okamoto, Shoji ^{[1
]}

Horiguchi, Takeshi ^{[2
]}

Tominaga, Shinji ^{[1
]}

Nishimura, Tadashi ^{[1
]}

Fujita, Hideaki ^{[1
]}

Akagi, Hirofumi ^{[1
]}

Kinouchi, Shin-Ichi ^{[2
]}

Oi, Takeshi ^{[2
]}

机构：

[1] Graduate School of Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo

[2] Advanced Technology R and D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-Honmachi, Amagasaki, Hyogo

来源：

IEEJ Transactions on Industry Applications | 2014年 / 134卷 / 10期

关键词：

Fault under load; IGBT; Physics-based model; Reverse transfer capacitance; Short circuit protection;

D O I：

10.1541/ieejias.134.853

中图分类号：

学科分类号：

摘要：

This paper presents a protection circuit for a fault under load (FUL). The protection circuit is characterized by the reverse transfer capacitance characteristic of IGBTs. The reverse transfer capacitance depends on the collector-emitter voltage and has a significant influence on the switching behavior under short-circuit conditions and normal conditions. An FUL is detected by monitoring a gate current because the current flows through the reverse transfer capacitance of IGBTs from the collector terminal to the gate terminal under FUL conditions. A physics-based IGBT model shows high accuracy for both static and dynamic characteristics, making it useful for developing a protection circuit for IGBTs subjected to short-circuit conditions. Simulated results using the physics-based IGBT model and experimental results verify the validity of the proposed protection circuit. © 2014 The Institute of Electrical Engineers of Japan.

引用

页码：853 / 862

页数：9

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