A physical model for MOSFET drain current in non-ohmic regime using ohmic regime operation

被引：0
|
作者：
El Abbassi, A. [1 ]
Amhouche, Y. [1 ]
Raïs, K. [1 ]
Rmaily, R. [1 ]
机构：
[1] Laboratoire de CCS, Université Chouaib, Doukkali B.P. 20, El Jadida, Morocco
来源：
Active and Passive Electronic Components | 2001年 / 24卷 / 01期
关键词：
Electric charge - Electric conductance - Electric currents - Velocity;
D O I：
10.1155/2001/34065
中图分类号：
学科分类号：
摘要：
In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristic Id0(Vd) avoiding velocity saturation phenomena, can be obtained from ohmic characteristic Id(Vg) and compared with the experimental characteristic ld(Vd).
引用
收藏
页码：23 / 29
相关论文
共 50 条
  • [21] NON-OHMIC DISSIPATIVE REGIME IN THE SUPERCONDUCTING TRANSITION OF POLYCRYSTALLINE Y1BA2CU3OX
    DUBSON, MA
    HERBERT, ST
    CALABRESE, JJ
    HARRIS, DC
    PATTON, BR
    GARLAND, JC
    PHYSICAL REVIEW LETTERS, 1988, 60 (11) : 1061 - 1064
  • [22] TEMPERATURE-DEPENDENCE OF NON-OHMIC CURRENT AND SWITCHING CHARACTERISTICS OF A CHALCOGENIDE GLASS
    THOMAS, CB
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (18) : 2587 - 2596
  • [23] Non-ohmic behavior of metal-insulator granular thin films in low-field regime (eΔV << kBT)
    Boff, M. A. S.
    Canto, B.
    Mesquita, F.
    Hinrichs, R.
    Fraga, G. L. F.
    Pereira, L. G.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (15)
  • [24] Current generated periodic space charge in semiconductor diodes with non-ohmic injection
    1600, (75):
  • [25] On the uniqueness of non-Ohmic current profile inferred from surface voltage relaxation
    Litwin, C.
    Physics Letters, Section A: General, Atomic and Solid State Physics, 1996, 213 (3-4): : 183 - 185
  • [26] On the uniqueness of non-Ohmic current profile inferred from surface voltage relaxation
    Litwin, C
    PHYSICS LETTERS A, 1996, 213 (3-4) : 183 - 185
  • [27] 2-BAND MODEL FOR NBSE3 (OHMIC REGIME)
    ONG, NP
    PHYSICAL REVIEW B, 1978, 18 (10): : 5272 - 5279
  • [28] NON-OHMIC EFFECT OF SHUNTED-JOSEPHSON-JUNCTION MODEL - THE AUTONOMOUS CASE
    MATSUO, K
    SUPPLEMENT OF THE PROGRESS OF THEORETICAL PHYSICS, 1980, (69): : 301 - 310
  • [29] Simulation of atrial fibrillation in a non-ohmic propagation model with dynamic gap junctions
    Saliani, Ariane
    Biswas, Subhamoy
    Jacquemet, Vincent
    CHAOS, 2022, 32 (04)
  • [30] 2ND CURRENT SATURATION OF NON-OHMIC BEHAVIOR IN CDS SINGLE CRYSTALS
    UCHIDA, I
    ISHIGURO, T
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) : 935 - &
12345