A physical model for MOSFET drain current in non-ohmic regime using ohmic regime operation

被引：0
|
作者：
El Abbassi, A. [1 ]
Amhouche, Y. [1 ]
Raïs, K. [1 ]
Rmaily, R. [1 ]
机构：
[1] Laboratoire de CCS, Université Chouaib, Doukkali B.P. 20, El Jadida, Morocco
来源：
Active and Passive Electronic Components | 2001年 / 24卷 / 01期
关键词：
Electric charge - Electric conductance - Electric currents - Velocity;
D O I：
10.1155/2001/34065
中图分类号：
学科分类号：
摘要：
In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristic Id0(Vd) avoiding velocity saturation phenomena, can be obtained from ohmic characteristic Id(Vg) and compared with the experimental characteristic ld(Vd).
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页码：23 / 29
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