Characterization of plasma-induced damage of selectively recessed GaN/InAlN/AlN/GaN heterostructures using SiCl4 and SF6

被引：0

作者：

Ostermaier, Clemens ^{[1
]}

Pozzovivo, Gianmauro ^{[1
]}

Basnar, Bernhard ^{[1
]}

Schrenk, Werner ^{[1
]}

Carlin, Jean-François ^{[2
]}

Gonschorek, Marcus ^{[2
]}

Grandjean, Nicolas ^{[2
]}

Vincze, Andrej ^{[3
]}

Tóth, Lajos ^{[4
]}

Pécz, Bela ^{[4
]}

Strasser, Gottfried ^{[1
]}

Pogany, Dionyz ^{[1
]}

Kuzmik, Jan ^{[1
,5
]}

机构：

[1] Institute of Solid State Electronics, Center for Micro and Nanostructures, Vienna University of Technology, A-1040 Vienna, Austria

[2] Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

[3] International Laser Centre, Ilkovicova 3, 841 04 Bratislava, Slovakia

[4] Research Institute for Technical Physics and Material Science, H-1525 Budapest, Hungary

[5] Institute of Electrical Engineering, Slovac Academy of Sciences, 841 04 Bratislava, Slovakia

来源：

Japanese Journal of Applied Physics | 2010年 / 49卷 / 11期

关键词：

701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 804.2 Inorganic Compounds - 932.3 Plasma Physics;

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