Research Progress of Two-Dimensional Electrical Conductivity and Field Effect Transistors of Diamond

被引：0

作者：

Zhang, Jin-Feng ^{[1
,2
]}

Zhang, Jin-Cheng ^{[1
]}

Ren, Ze-Yang ^{[1
,2
]}

Su, Kai ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Shanxi, Xi’an

[2] Xidian-Wuhu Research Institute, Anhui, Wuhu

来源：

Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2024年 / 52卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Diamond; field-effect transistor; hydrogen-terminated; two-dimensional hole gas;

D O I：

10.12263/DZXB.20240103

中图分类号：

学科分类号：

摘要：

Diamond surface-channel field-effect transistor utilizes two-dimensional hole gas (2DHG) on the hydrogen-terminated diamond surface as the channel to realize the control on output current by input voltage, and it is the mainstream structure of diamond electronic devices. The 2DHG conductivity has a large range of controllable sheet density and a high saturation drift velocity. This paper reviewed the research progress of diamond field-effect transistors in DC, frequency, and power characteristics, and revealed that low mobility is the main limiting factor for the development of diamond-based low-power high-speed digital circuits, high-frequency devices, and high-power microwave devices. It summarized the theoretical and experimental research of a new doping mechanism similar to modulation doping that emerged for the diamond surface conductivity recently. At room temperature the 2DHG Hall mobility has increased to 680 cm2/Vs, and the relevant square resistance has decreased from about 10 kΩ/sq to 1.4 kΩ/sq, which is expected to cause a great improvement in the performance of diamond field-effect transistors. © 2024 Chinese Institute of Electronics. All rights reserved.

引用

页码：2151 / 2160

页数：9

共 70 条

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