Nonlinear response of terahertz detectors based on heterostructure field effect transistors

被引：0

作者：

Cao L. ^{[1
]}

Xia H. ^{[1
]}

Jia S. ^{[1
]}

Yin Z. ^{[1
]}

机构：

[1] School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan

来源：

Huazhong Keji Daxue Xuebao (Ziran Kexue Ban)/Journal of Huazhong University of Science and Technology (Natural Science Edition) | 2021年 / 49卷 / 11期

关键词：

Field effect transistor; Finite difference method; Nonlinear response; Partial differential equation; Terahertz detector;

D O I：

10.13245/j.hust.211101

中图分类号：

学科分类号：

摘要：

Based on equations of fluid dynamics describing the concentration and the drift velocity of 2DEG (two-dimensional electron gas) in the AlGaN/GaN heterostructure, the finite difference method was adopted to numerically solve the one dimensional nonlinear coupled system of partial differential equations with appropriate discrete time and space steps. The transient response and output direct current voltage (open circuit voltage between the drain-source terminals) of the field effect transistor detector under different intensity levels and frequencies of the incident terahertz (THz) signal was calculated, and the difference between the detector actual output (nonlinear response) and the existing small signal linear theory was quantitatively analyzed under the constant gate voltage. The detector steady-state response under the excitation of sinusoidal source was expanded by Fourier series, and the relationship between the amplitude of each harmonic and the intensity of the incident signal was analyzed. Research results will lay a theoretical foundation for future experimental research with powerful and tunable terahertz source at laboratory. © 2021, Editorial Board of Journal of Huazhong University of Science and Technology. All right reserved.

引用

页码：1 / 5

页数：4

共 14 条

[1] TONOUCHI M., Cutting-edge terahertz technology, Nature Photonics, 1, 2, pp. 97-105, (2007)
[2] 39, 2
[3] SUN Y F, SUN J D, ZHANG X Y, Et al., Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors, Chinese Physics: B, 21, 10, (2012)
[4] SUN Y F, SUN J D, ZHOU Y, Et al., Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas, Applied Physics Letters, 98, (2011)
[5] CAO L, FU Q, WU B, Et al., Terahertz magnetoplasmon-polaritons with nonlocal corrections for lossy two dimensional electron gas in GaN-based heterostructures, Journal of Physics: Condensed Matter, 29, (2017)
[6] CAO L, GRIMAULT-JACQUIN A S, ANIEL F., Optimal structure for resonant THz detection of plasmons-polaritons in the 2D quantum wells, Applied Physics: A, 109, 4, pp. 985-991, (2012)
[7] SPISSER H, GRIMAULT-JACQUIN A S, ZEROUNIAN N, Et al., Room-temperature AlGaN/GaN Terahertz plasmonic detectors with a zero-bias grating, Journal of Infrared, Millimeter, and Terahertz Waves, 37, pp. 243-257, (2016)
[8] DYAKONOV M, SHUR M., Shallow water analogy for a ballistic field effect transistor: new mechanism of plasma wave generation by dc current, Phys Rev Lett, 71, 15, pp. 2465-2468, (1993)
[9] TANIGAWA T, ONISHI T, TAKIGAWA S, Et al., Enhanced responsivity in a novel AlGaN/GaN plasmon-resonant terahertz detector using gate-dipole antenna with parasitic elements, Proc of IEEE 68th Device Research Conference 2010, pp. 167-168, (2010)
[10] CHEN Q S, QIN B, LIU Kaifeng, Et al., Design and testing of focusing magnets for a compact electron linac, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 798, pp. 74-79, (2015)

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