Study on Film Thickness Uniformity of Magnetron Sputtering System Based on Twin Target

被引:0
作者
Wei B. [1 ]
Liu D. [1 ]
Fu X. [1 ]
Zhang J. [1 ]
Wang Y. [1 ]
Geng Y. [2 ]
机构
[1] School of Opto-Electronic Engineering, Changchun University of Science and Technology, Jilin
[2] Optorun (Shanghai) Co., Ltd., Shanghai
来源
Guangxue Xuebao/Acta Optica Sinica | 2021年 / 41卷 / 07期
关键词
Binary gradient inflation mode; Magnetron sputtering; Plasma density; Sine half-wave; Thickness uniformity; Thin films; Twin target;
D O I
10.3788/AOS202141.0731001
中图分类号
学科分类号
摘要
Film thickness uniformity in a magnetron sputtering system is one of the key indicators. The effects of magnetic field intensity, distance between target and substrate and gas pressure on the thickness uniformity of Si3N4 and SiO2 films are analyzed. The plasma density is analyzed by using Langmuir probe, and the longitudinal uniformity is adjusted by binary gradient inflation mode. By loading sine half-wave voltage to the target and using MATLAB software to determine the amplitude and phase parameters, so as to adjust the uniformity of the transverse. The experiment results show that for the Si3N4 film, the transverse uniformity is ±1.27%, ±0.62%, and ±1.33% respectively at the top, middle, and bottom, and the longitudinal uniformity is ±0.33%. For the SiO2 film, the transverse uniformity is ±1.12%, ±0.42%, and ±1.23% respectively at the top, middle, and bottom, and the longitudinal uniformity is ±0.25%. © 2021, Chinese Lasers Press. All right reserved.
引用
收藏
相关论文
共 17 条
[1]  
Motohiro T., Applications of Monte Carlo simulation in the analysis of a sputter-deposition process, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 4, 2, pp. 189-195, (1986)
[2]  
Billard A, Frantz C., Attempted modelling of thickness and chemical heterogeneity in coatings prepared by d.c. reactive magnetron sputtering, Surface and Coatings Technology, 59, 1, pp. 41-47, (1993)
[3]  
Fan Q H, Chen X H, Zhang Y., Computer simulation of film thickness distribution in symmetrical magnet magnetron sputtering, Vacuum, 46, 3, pp. 229-232, (1995)
[4]  
Ai W J, Xiong S M., Analysis of film thickness uniformity for large aperture coater of 3.6 m in diameter, Opto-Electronic Engineering, 38, 11, pp. 73-78, (2011)
[5]  
Guo C, Kong M D, Liu C D, Et al., Shadowing masks for thickness uniformity in a plane planetary system, Acta Optica Sinica, 33, 2, (2013)
[6]  
Shishkov M, Popov D., Thickness uniformity of thin films deposited on a flat substrate by sputtering of a target with rotational symmetry, Vacuum, 42, 15, pp. 1005-1008, (1991)
[7]  
Mahieu S, Buyle G, Depla D, Et al., Monte Carlo simulation of the transport of atoms in DC magnetron sputtering, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms, 243, 2, pp. 313-319, (2006)
[8]  
Tan X D, Ma Z, Cai B W., Simulating uniformity of film thickness with finite-elements method, Laser Technology, 27, 5, pp. 480-483, (2003)
[9]  
Yu H, Wang T, Wu Z M, Et al., Influence of rotation-revolution on time evolution of growth uniformity of magnetron sputtered films, Chinese Journal of Vacuum Science and Technology, 30, 2, pp. 149-153, (2010)
[10]  
Zhu Y D, Fang M, Yi K., Precise control of thickness uniformity in Mo/Si soft X-ray multilayer, Acta Optica Sinica, 31, 11, (2011)