Photoemission study on the 6H-SiC(0001) 3 × 3 surface

被引：0
|
作者：
Ihm, Kyuwook [1 ]
Cho, Eun-Sang [2 ]
Hwang, Chan-Cuk [1 ]
Kang, Tai-Hee [1 ]
Jeon, Cheol-Ho [2 ]
Kim, Ki-Jeong [1 ]
Kim, Bongsoo [1 ]
Park, Chong-Yun [2 ]
机构：
[1] Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang Univ. of Sci. and Technology, Pohang, Kyungbuk 790-784, Korea, Republic of
[2] Department of Physics, Institute of Basic Science, Sung Kyun Kwan University, Suwon 440-746, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 5 A期
关键词：
Chemical bonds - Electron emission - Ionization - Low energy electron diffraction - Photoelectron spectroscopy - Photoemission - Silicon carbide;
D O I：
10.1143/jjap.42.2605
中图分类号：
学科分类号：
摘要：
We have investigated the 6H-SiC(0001) √3 × √3 R30° and 3 × 3 surfaces using the valence band spectra and the workfunction change as a function of the Na coverage. The Na-induced ionization energy shift of the √3 × √3 R30° surface at the minimum value of the workfunction is in good agreement with the calculated one based on the Si-T4 model in which Na is adsorbed at all DBs. Similar workfunction changes suggest that the 6H-SiC(0001) 3 × 3 surface has the same density of reactive sites (1/3 ML) as the √3 × √3 R30° surface. This result is interpreted in the framework of current models of the 3 × 3 reconstruction. In particular, we show that the results are not compatible with the accepted Erlangen-Jena model.
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页码：2605 / 2608
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