Photoemission study on the 6H-SiC(0001) 3 × 3 surface

被引：0

作者：

Ihm, Kyuwook ^{[1
]}

Cho, Eun-Sang ^{[2
]}

Hwang, Chan-Cuk ^{[1
]}

Kang, Tai-Hee ^{[1
]}

Jeon, Cheol-Ho ^{[2
]}

Kim, Ki-Jeong ^{[1
]}

Kim, Bongsoo ^{[1
]}

Park, Chong-Yun ^{[2
]}

机构：

[1] Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang Univ. of Sci. and Technology, Pohang, Kyungbuk 790-784, Korea, Republic of

[2] Department of Physics, Institute of Basic Science, Sung Kyun Kwan University, Suwon 440-746, Korea, Republic of

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 5 A期

关键词：

Chemical bonds - Electron emission - Ionization - Low energy electron diffraction - Photoelectron spectroscopy - Photoemission - Silicon carbide;

D O I：

10.1143/jjap.42.2605

中图分类号：

学科分类号：

摘要：

We have investigated the 6H-SiC(0001) √3 × √3 R30° and 3 × 3 surfaces using the valence band spectra and the workfunction change as a function of the Na coverage. The Na-induced ionization energy shift of the √3 × √3 R30° surface at the minimum value of the workfunction is in good agreement with the calculated one based on the Si-T4 model in which Na is adsorbed at all DBs. Similar workfunction changes suggest that the 6H-SiC(0001) 3 × 3 surface has the same density of reactive sites (1/3 ML) as the √3 × √3 R30° surface. This result is interpreted in the framework of current models of the 3 × 3 reconstruction. In particular, we show that the results are not compatible with the accepted Erlangen-Jena model.

引用

页码：2605 / 2608

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