Influences of CuAl2O4 doping on the dielectric properties of CaCu3Ti4O12 ceramics

被引：0

作者：

Li, Jian-Ying ^{[1
]}

Hou, Lin-Lin ^{[1
]}

Jia, Ran ^{[1
]}

Gao, Lu ^{[1
]}

Wu, Kang-Ning ^{[1
]}

Li, Sheng-Tao ^{[1
]}

机构：

[1] State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an

来源：

Wuji Cailiao Xuebao/Journal of Inorganic Materials | 2015年 / 30卷 / 10期

基金：

中国国家自然科学基金;

关键词：

CaCu[!sub]3[!/sub]Ti[!sub]4[!/sub]O[!sub]12[!/sub; Dielectric properties; Varistor properties;

D O I：

10.15541/jim20150118

中图分类号：

学科分类号：

摘要：

The influences of CuAl2O4 doping on the microstructure and dielectric relaxation of CaCu3Ti4O12 (CCTO) ceramics were investigated. The dielectric properties were measured in the frequency from 10-1 Hz to 107 Hz under the temperature from 153 to 453 K. It was found that reduced CCTO grains as well as improved microstructure were achieved by addition of 30mol%-50mol% CuAl2O4. When sintered at 1100℃ for 4 h, enhanced electric breakdown field of 13 kV/cm was obtained with 50mol% CuAl2O4 addition, while its dielectric loss at low frequency was greatly suppressed. Three energy levels of dielectric relaxation processes were found. It is suggested that energy level 1 eV of ~0.10 eV, corresponding to high frequency relaxation and barely varied with CuAl2O4 addition, is attributed to the intrinsic electronic relaxation. Energy level 2 decreased from 0.50 eV to 0.22 eV with increased additional CuAl2O4, possibly resulted from multi impurities and boundaries. The energy level of conduction process rose from 0.66 eV to 0.86 eV with increased CuAl2O4 addition, which can be attributed to the block effect of more grain boundaries. In addition, the excessive content CuAl2O4 resulted in collapse of grain boundary barrier, leading to the vanish of non-ohmic properties and high dielectric constant. ©, 2015, Science Press. All right reserved.

引用

页码：1056 / 1062

页数：6

共 27 条

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