Ellipsometric monitoring of first stages of graphene growth in plasma-enhanced chemical vapor deposition

被引：0
|
作者：
Hayashi Y. [1 ]
Ishidoshiro S. [1 ]
Yamada S. [1 ]
Kawamura Y. [1 ]
机构：
[1] Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto
来源：
| 1600年 / Vacuum Society of Japan卷 / 60期
关键词：
Coordinate plane - Ellipsometric parameters - Graphene growth - Magnetron plasmas - Substrate surface;
D O I：
10.3131/jvsj2.60.135
中图分类号：
学科分类号：
摘要：
Ellipsometry monitoring was carried out in-situ for the analyses of substrate surface in the first stages of graphene growth in magnetron plasma-enhanced chemical vapor deposition. By the comparison of the experimentally obtained trajectory of ellipsometric parameters on the Ψ-Δ coordinate plane to that of the calculated ones, it has been found that graphene tends to grow parallel to substrate surface under the pressure of 10 Pa while perpendicularly under that of 200 Pa.
引用
收藏
页码：135 / 138
页数：3
相关论文
共 50 条
  • [1] Monitoring and analyses of substrate surface in first stages of graphene growth in plasma-enhanced chemical vapor deposition
    Kawano, Masahiro
    Yamada, Shunya
    Hayashi, Yasuaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (06)
  • [2] Plasma-Enhanced Chemical Vapor Deposition of Graphene Nanostructures
    van der Laan, Timothy
    Kumar, Shailesh
    Ostrikova, Kostya
    ADVANCES IN NANODEVICES AND NANOFABRICATION, 2012, : 75 - 98
  • [3] Modeling of plasma-enhanced chemical vapor deposition growth of graphene on cobalt substrates
    Hinkov, Ivaylo
    Pashova, Katya
    Farhat, Samir
    DIAMOND AND RELATED MATERIALS, 2019, 93 : 84 - 95
  • [4] Insights into the Mechanism for Vertical Graphene Growth by Plasma-Enhanced Chemical Vapor Deposition
    Sun, Jie
    Rattanasawatesun, Tanupong
    Tang, Penghao
    Bi, Zhaoxia
    Pandit, Santosh
    Lam, Lisa
    Wasen, Caroline
    Erlandsson, Malin
    Bokarewa, Maria
    Dong, Jichen
    Ding, Feng
    Xiong, Fangzhu
    Mijakovic, Ivan
    ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (05) : 7152 - 7160
  • [5] Plasma-enhanced chemical vapor deposition of graphene on copper substrates
    Woehrl, Nicolas
    Ochedowski, Oliver
    Gottlieb, Steven
    Shibasaki, Kosuke
    Schulz, Stephan
    AIP ADVANCES, 2014, 4 (04)
  • [6] Plasma-enhanced chemical vapor deposition of amorphous Si on graphene
    Lupina, G.
    Strobel, C.
    Dabrowski, J.
    Lippert, G.
    Kitzmann, J.
    Krause, H. M.
    Wenger, Ch.
    Lukosius, M.
    Wolff, A.
    Albert, M.
    Bartha, J. W.
    APPLIED PHYSICS LETTERS, 2016, 108 (19)
  • [7] Plasma-enhanced chemical vapor deposition of graphene optimized by pressure
    Ma, Chen
    Yu, Hugo
    Yu, Kehan
    MATERIALS RESEARCH EXPRESS, 2019, 6 (10):
  • [8] Vertical graphene by plasma-enhanced chemical vapor deposition: Correlation of plasma conditions and growth characteristics
    Sandoz-Rosado, Emil
    Page, William
    O'Brien, David
    Przepioski, Joshua
    Mo, Dennis
    Wang, Benjamin
    Ngo-Duc, Tam-Triet
    Gacusan, Jovi
    Winter, Michael W.
    Meyyappan, M.
    Cormia, Robert D.
    Takahashi, Shuhei
    Oyea, Michael M.
    JOURNAL OF MATERIALS RESEARCH, 2014, 29 (03) : 417 - 425
  • [9] Vertical graphene by plasma-enhanced chemical vapor deposition: Correlation of plasma conditions and growth characteristics
    Emil Sandoz-Rosado
    William Page
    David O’Brien
    Joshua Przepioski
    Dennis Mo
    Benjamin Wang
    Tam-Triet Ngo-Duc
    Jovi Gacusan
    Michael W. Winter
    M. Meyyappan
    Robert D. Cormia
    Shuhei Takahashi
    Michael M. Oye
    Journal of Materials Research, 2014, 29 : 417 - 425
  • [10] Molecular understanding of the effect of hydrogen on graphene growth by plasma-enhanced chemical vapor deposition
    Wu, Shiwen
    Huang, Dezhao
    Yu, Haoliang
    Tian, Siyu
    Malik, Arif
    Luo, Tengfei
    Xiong, Guoping
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2022, 24 (17) : 10297 - 10304
12345