Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability

被引：0

作者：

Gupta S. ^{[1
]}

Sharma D. ^{[1
]}

Soni D. ^{[1
]}

Yadav S. ^{[1
]}

Aslam M. ^{[1
]}

Yadav D.S. ^{[1
]}

Nigam K. ^{[1
]}

Sharma N. ^{[2
]}

机构：

[1] Nanoelectronics and VLSI Lab, Electronics and Communication Engineering Discipline, PDPM Indian Institute of Information Technology, Design and Manufacturing, Jabalpur

[2] Department of Computer Engineering, Ramrao Adik Institute of Technology, Nerul, Navi, Mumbai

来源：

Micro and Nano Letters | 2018年 / 13卷 / 08期

关键词：

Band diagram - Carrier concentration - Cutoff frequency - Electric fields - Gate dielectrics - High-k dielectric - Low-k dielectric - Silica - Transconductance;

D O I：

10.1049/MNL.2017.0869

中图分类号：

学科分类号：

摘要：

In this work, the authors have reported the reliability issues of dual material control gate tunnel field effect transistor (DMCG-TFET) and proposed heterogeneous gate dielectric dual metal control gate tunnel field effect transistors (HD DMCG-TFETs) in terms of interface trap charges (ITCs). The positive and negative types of localised charges at the semiconductor/insulator interface cause degradation in the device performance (DC/RF). In this regard, the proposed structure which includes combination of low-K and high-K dielectric improves the immunity towards the ITCs at the interface of semiconductor/insulator with better performance. In this concern, the study has analysed the impact of ITCs on DC and analogue/RF performances of the DMCG-TFET and HD DMCG-TFET in terms of various parameters like electric field, energy band diagram, carrier concentration, transfer characteristics, transconductance (gm ), cutoff frequency (fT ) and gain bandwidth product. Further to this, impact on device linearity parameters is also analysed through higher order of transconductance coefficients (gm3 ), VIP2, VIP3 and IIP3. © The Institution of Engineering and Technology 2018.

引用

页码：1192 / 1196

页数：4