Solution processed single-grain Si TFTs on a plastic substrate

被引：0

作者：

Ishihara, Ryoichi ^{[1
,3
]}

Zhang, Jin ^{[1
]}

Zwan, Michiel V. D. ^{[1
]}

Trifunovic, Miki ^{[1
]}

Takagishi, Hideyuki ^{[2
]}

Shimoda, Tatsuya ^{[2
,3
]}

机构：

[1] Delft Univ. of Technol., Delft

[2] JST ERATO, Shimoda Nano-Liquid Process Project, Ishikawa

[3] Sch. of Mat. Sci., Japan Advanced Institute of Sci. and Technol. (JAIST), Ishikawa

来源：

Digest of Technical Papers - SID International Symposium | 2014年 / 45卷 / 01期

关键词：

excimer-laser; liquid-Si; poly-Si; solution process; TFTs;

D O I：

10.1002/j.2168-0159.2014.tb00118.x

中图分类号：

学科分类号：

摘要：

High-mobility single-grain Si TFTs have been successfully fabricated on a polyimide-coated substrate with solution process of Si. After doctor-blade coating of cyclopentasilane (CPS), a-Si:H was obtained at a temperature below 350°C. With dehydrogenation and crystallization by excimer laser, grains with a maximum diameter of 3 μm were obtained at predetermined positions. Single-grain Si TFTs showed mobilities of 460cm2/Vs and 121cm 2/Vs for electrons and holes, respectively. The devices were transferred onto a PEN foil and operated under a bending diameter as small as 6 mm. The results suggest the proposed technology to be attractive for various innovative applications, not only for driver-integrated flexible displays, but also for ultra-high-frequency RF-ID tag, highly-sensitive bio-medical sensors and eventually for integrated smart-systems on a plastic. © 2014 Society for Information Display.

引用

页码：439 / 442

页数：3

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