Femtosecond silicon Kα pulses from laser-produced plasmas

被引：64

作者：

Feurer, T. ^{[1
]}

Morak, A. ^{[1
]}

Uschmann, I. ^{[1
]}

Ziener, Ch. ^{[1
]}

Schwoerer, H. ^{[1
]}

Reich, Ch. ^{[1
]}

Gibbon, P. ^{[1
]}

Förster, E. ^{[1
]}

Sauerbrey, R. ^{[1
]}

Ortner, K. ^{[2
]}

Becker, C.R. ^{[2
]}

机构：

[1] Inst. F. Optik und Quantenelektronik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, D-07743 Jena, Germany

[2] Experimentelle Physik III, Universität Würzburg, Am Hubland, D-07743 Würzburg, Germany

来源：

Physical Review E - Statistical, Nonlinear, and Soft Matter Physics | 2002年 / 65卷 / 01期

关键词：

Carrier concentration - Heating - Irradiation - Metal foil - Photons - Polarization - Positrons;

D O I：

10.1103/PhysRevE.65.016412

中图分类号：

学科分类号：

摘要：

Ultrashort bursts of silicon Kα x-ray radiation from femtosecond-laser-produced plasmas have been generated. A cross-correlation measurement employing a laser-triggered ultrafast structural change of a CdTe crystal layer (320 nm) shows a K α pulse duration between 200 fs and 640 fs. This result is corroborated by particle in cell simulations combined with a Monte-Carlo electron stopping code and calculations on the structural changes of the crystal lattice. © 2001 The American Physical Society.

引用

页码：1 / 016412