Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN

被引：0
作者：
机构：
来源：
| 1600年 / American Institute of Physics Inc.期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy
    Kim, J
    Samiee, K
    White, JO
    Myoung, JM
    Kim, K
    APPLIED PHYSICS LETTERS, 2002, 80 (06) : 989 - 991
  • [32] Photoluminescence study of Si doping cubic GaN grown on (001) GaAs substrates by molecular beam epitaxy
    Li, ZQ
    Chen, H
    Liu, HF
    Wan, L
    Huang, Q
    Zhou, JM
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 420 - 424
  • [33] MICROSTRUCTURE AND PHOTOLUMINESCENCE OF GAN GROWN ON SI(111) BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
    OHTANI, A
    STEVENS, KS
    BERESFORD, R
    APPLIED PHYSICS LETTERS, 1994, 65 (01) : 61 - 63
  • [34] Photoluminescence measurement of InGaN and GaN grown by a gas-source molecular-beam epitaxy method
    Yoshida, S
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) : 7966 - 7969
  • [35] Photoreflectance and photoluminescence spectroscopy of low-temperature GaAs grown by molecular-beam epitaxy
    Sinha, S
    Arora, BM
    Subramanian, S
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) : 427 - 432
  • [36] Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs
    Izhnin, I. I.
    Izhnin, A. I.
    Mynbaev, K. D.
    Bazhenov, N. L.
    Shilyaev, A. V.
    Mikhailov, N. N.
    Varavin, V. S.
    Dvoretsky, S. A.
    Fitsych, O. I.
    Voitsekhovsky, A. V.
    OPTO-ELECTRONICS REVIEW, 2013, 21 (04) : 390 - 394
  • [37] Degradation mechanisms of annealed GaAsPBi films grown by molecular beam epitaxy
    Himwas, C.
    Wongpinij, T.
    Kijamnajsuk, S.
    Euaruksakul, C.
    Photongkam, P.
    Tchernycheva, M.
    Pumee, W.
    Panyakeow, S.
    Kanjanachuchai, S.
    SURFACES AND INTERFACES, 2023, 40
  • [38] Analysis of deep traps in hexagonal molecular beam epitaxy-grown GaN by admittance spectroscopy
    Krtschil, A
    Witte, H
    Lisker, M
    Christen, J
    Birkle, U
    Einfeldt, S
    Hommel, D
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) : 2040 - 2043
  • [39] Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy
    Hsiao, Ching-Lien
    Tu, Li-Wei
    Chi, Tung-Wei
    Chen, Min
    Young, Tai-Fa
    Chia, Chih-Ta
    Chang, Yu-Ming
    APPLIED PHYSICS LETTERS, 2007, 90 (04)
  • [40] Thermally stimulated current spectroscopy of carbon-doped GaN grown by molecular beam epitaxy
    Fang, ZQ
    Look, DC
    Armitage, R
    Yang, Q
    Weber, ER
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 521 - 526
12345