Synthesis and characterization of graphene on copper foil via atmospheric pressure chemical vapor deposition method and its impact on electrical properties

Copper, prized for its exceptional electrical conductivity, thermal conductivity, and mechanical strength, is a staple in electronic applications. The ongoing quest for enhanced performance in miniaturized technologies has led to exploring copper-graphene composites, particularly those integrating bilayer graphene (BLG). This study investigates the enhancement of electrical conductivity in copper through the incorporation of BLG via atmospheric pressure chemical vapor deposition (APCVD). The research highlights the APCVD method's ability to grow high-quality BLG on high-purity oxygen-free copper foil, demonstrating significant improvements in electrical properties. Detailed characterization reveal that the graphene growth process induces structural changes in the copper, promoting ideal crystallographic orientations and larger grain sizes. This process achieves nearly complete graphene coverage and results in a copper/graphene (Cu/GR) composite with minimal defects. The electrical conductivity of the Cu/GR composite significantly increased to 59.32 x 10(6) S center dot m(-1), a 7.83 % improvement over the pristine copper foil. This enhancement is attributed to the increased carrier density and mobility within the composite. These advancements suggest the potential of APCVD-grown graphene for various high-performance electronic applications, providing a promising pathway for further development and optimization of graphene-copper composites.