Modeling study on thermal conductivity of two-dimensional hexagonal aluminum nitride

被引：0

作者：

Xu S. ^{[1
]}

Zhao L. ^{[1
]}

Cai Z. ^{[1
]}

Chen C. ^{[1
]}

机构：

[1] Key Laboratory of Energy Thermal Conversion and Control of Ministry of Education, School of Energy & Environment, Southeast University, Nanjing, 210096, Jiangsu

来源：

Huagong Xuebao/CIESC Journal | 2017年 / 68卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Hexagonal aluminum nitride; Molecular dynamics simulation; Phonon transport; Quantum correction; Stability; Thermal properties;

D O I：

10.11949/j.issn.0438-1157.20170274

中图分类号：

学科分类号：

摘要：

Hexagonal aluminum nitride (h-AlN) is a kind of new III-V two-dimensional material. It has similar molecular structure and material properties with graphene and has been extensively focused. However, its thermal conductivity property has not been fully studied. In this paper, the thermal stability and thermal conductivity of single-layer h-AlN films at different temperatures have been studied, and its phonon dispersion also has been analyzed by using molecular dynamics simulation. The results show that single-layer h-AlN materials maintain structural stability at very high temperature (3500 K), and the thermal conductivity can reach 264.2 W·m-1·K-1 at room temperature. As result of phonon scattering, the thermal conductivity of the material is significantly reduced at temperatures above 500 K. These findings will provide theoretical guidance for the control of heat conducting of h-AlN materials and the application of high-temperature heat-conducting materials. © All Right Reserved.

引用

页码：3321 / 3327

页数：6

共 30 条

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