Reprint of «palladium Ohmic contact on hydrogen-terminated single crystal diamond film»

被引:0
|
作者
Wang W. [1 ]
Hu C. [1 ]
Li F.N. [1 ]
Li S.Y. [1 ]
Liu Z.C. [1 ]
Wang F. [1 ]
Fu J. [1 ]
Wang H.X. [1 ]
机构
[1] Key Laboratory for Physical Electronics, Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi'An Jiaotong University, Xi'an, Shaanxi
来源
Wang, H.X. (hxwangcn@mail.xjtu.edu.cn) | 1600年 / Elsevier Ltd卷 / 63期
关键词
Annealing; Ohmic contact; Palladium; Specific contact resistance; Surface treatment; XPS;
D O I
10.1016/j.diamond.2016.01.019
中图分类号
学科分类号
摘要
Contact properties of Palladium (Pd) on the surface of hydrogen-terminated single crystal diamond were investigated with several treatment conditions. 150 nm Pd pad was deposited on diamond surface by thermal evaporation technique, which shows good Ohmic properties with the specific contact resistivity (ρc) of 1.8 × 10- 6 Ω cm2 evaluated by Transmission Line Model. To identify the thermal stability, the sample was annealed in Ar ambient from 300 to 700 °C for 3 min at each temperature. As the temperature increased, ρc firstly decreased to 4.93 × 10-7 Ω cm2 at 400 °C and then increased. The barrier height was evaluated to be - 0.15 eV and - 0.03 eV for as-deposited and 700 °C annealed sample by X-ray photoelectron spectroscopy analysis. Several surface treatments were also carried out to determine their effect on ρc, among which HNO3 vapor treated sample indicates a lower value of 5.32 × 10-6 Ω cm2. © 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:175 / 179
页数:4
相关论文
共 50 条
  • [41] A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor
    Ge, Lei
    Peng, Yan
    Li, Bin
    Chen, Xiaohua
    Xu, Mingsheng
    Wang, Xiwei
    Cui, Yingxin
    Wang, Dufu
    Han, Jisheng
    Cheong, Kuan Yew
    Tanner, Philip
    Zhao, Ming
    Xu, Xiangang
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (08) : 1271 - 1274
  • [42] Time-dependent degradation of hydrogen-terminated diamond MESFETs
    De Santi, C.
    Pavanello, L.
    Nardo, A.
    Veron, C.
    Rinati, G. Verona
    Cannata, D.
    Di Pietrantonio, F.
    Meneghesso, G.
    Zanoni, E.
    Meneghini, M.
    TERAHERTZ, RF, MILLIMETER, AND SUBMILLIMETER-WAVE TECHNOLOGY AND APPLICATIONS XV, 2022, 12000
  • [43] Direct amination of hydrogen-terminated boron doped diamond surfaces
    Szunerits, Sabine
    Jama, Charafeddine
    Coffinier, Yannick
    Marcus, Bernadette
    Delabouglise, Didier
    Boukherroub, Rabah
    ELECTROCHEMISTRY COMMUNICATIONS, 2006, 8 (07) : 1185 - 1190
  • [44] A Physical Model of the Abnormal Behavior of Hydrogen-Terminated Diamond MESFET
    Wong, Hiu Yung
    Braga, Nelson
    Mickevicius, R. V.
    2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017), 2017, : 333 - 336
  • [45] Reversible Switch Memory Effect in Hydrogen-Terminated Ultrananocrystalline Diamond
    Tordjman, Moshe
    Bolker, Asaf
    Saguy, Cecile
    Baskin, Emanuel
    Bruno, Paola
    Gruen, Dieter M.
    Kalish, Rafi
    ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (09) : 1827 - 1834
  • [46] Gate Bias Effects on Hydrogen-Terminated Polycrystalline Diamond FETs
    Wang, Hongyue
    Liu, Yuebo
    Ge, Lei
    Xu, Mingsheng
    Shi, Yijun
    Cai, Zongqi
    Huang, Kai
    He, Zhiyuan
    Peng, Yan
    Wang, Xiwei
    Wang, Jinyan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (01) : 406 - 411
  • [47] Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations
    Zhang Jin-Feng
    Xu Jia-Min
    Ren Ze-Yang
    He Qi
    Xu Sheng-Rui
    Zhang Chun-Fu
    Zhang Jin-Cheng
    Hao Yue
    ACTA PHYSICA SINICA, 2020, 69 (02)
  • [48] Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface
    Kanazawa, H
    Song, KS
    Sakai, T
    Nakamura, Y
    Umezawa, H
    Tachiki, M
    Kawarada, H
    DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 618 - 622
  • [49] Direct observation of negative electron affinity in hydrogen-terminated diamond surfaces
    Takeuchi, D
    Kato, H
    Ri, GS
    Yamada, T
    Vinod, PR
    Hwang, D
    Nebel, CE
    Okushi, H
    Yamasaki, S
    APPLIED PHYSICS LETTERS, 2005, 86 (15) : 1 - 3
  • [50] Work function of hydrogen-terminated diamond surfaces under ion impact
    Pakes, C. I.
    Hoxley, D.
    Rubanov, S.
    Rabeau, J. R.
    Hearne, S. M.
    Jamieson, D. N.
    Prawer, S.
    Kalish, R.
    SURFACE SCIENCE, 2007, 601 (24) : 5732 - 5735