Reprint of «palladium Ohmic contact on hydrogen-terminated single crystal diamond film»

被引：0
|
作者：
Wang W. [1 ]
Hu C. [1 ]
Li F.N. [1 ]
Li S.Y. [1 ]
Liu Z.C. [1 ]
Wang F. [1 ]
Fu J. [1 ]
Wang H.X. [1 ]
机构：
[1] Key Laboratory for Physical Electronics, Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi'An Jiaotong University, Xi'an, Shaanxi
来源：
Wang, H.X. (hxwangcn@mail.xjtu.edu.cn) | 1600年 / Elsevier Ltd卷 / 63期
关键词：
Annealing; Ohmic contact; Palladium; Specific contact resistance; Surface treatment; XPS;
D O I：
10.1016/j.diamond.2016.01.019
中图分类号：
学科分类号：
摘要：
Contact properties of Palladium (Pd) on the surface of hydrogen-terminated single crystal diamond were investigated with several treatment conditions. 150 nm Pd pad was deposited on diamond surface by thermal evaporation technique, which shows good Ohmic properties with the specific contact resistivity (ρc) of 1.8 × 10- 6 Ω cm2 evaluated by Transmission Line Model. To identify the thermal stability, the sample was annealed in Ar ambient from 300 to 700 °C for 3 min at each temperature. As the temperature increased, ρc firstly decreased to 4.93 × 10-7 Ω cm2 at 400 °C and then increased. The barrier height was evaluated to be - 0.15 eV and - 0.03 eV for as-deposited and 700 °C annealed sample by X-ray photoelectron spectroscopy analysis. Several surface treatments were also carried out to determine their effect on ρc, among which HNO3 vapor treated sample indicates a lower value of 5.32 × 10-6 Ω cm2. © 2015 Elsevier B.V. All rights reserved.
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页码：175 / 179
页数：4
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