Reprint of «palladium Ohmic contact on hydrogen-terminated single crystal diamond film»

被引:0
|
作者
Wang W. [1 ]
Hu C. [1 ]
Li F.N. [1 ]
Li S.Y. [1 ]
Liu Z.C. [1 ]
Wang F. [1 ]
Fu J. [1 ]
Wang H.X. [1 ]
机构
[1] Key Laboratory for Physical Electronics, Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi'An Jiaotong University, Xi'an, Shaanxi
来源
Wang, H.X. (hxwangcn@mail.xjtu.edu.cn) | 1600年 / Elsevier Ltd卷 / 63期
关键词
Annealing; Ohmic contact; Palladium; Specific contact resistance; Surface treatment; XPS;
D O I
10.1016/j.diamond.2016.01.019
中图分类号
学科分类号
摘要
Contact properties of Palladium (Pd) on the surface of hydrogen-terminated single crystal diamond were investigated with several treatment conditions. 150 nm Pd pad was deposited on diamond surface by thermal evaporation technique, which shows good Ohmic properties with the specific contact resistivity (ρc) of 1.8 × 10- 6 Ω cm2 evaluated by Transmission Line Model. To identify the thermal stability, the sample was annealed in Ar ambient from 300 to 700 °C for 3 min at each temperature. As the temperature increased, ρc firstly decreased to 4.93 × 10-7 Ω cm2 at 400 °C and then increased. The barrier height was evaluated to be - 0.15 eV and - 0.03 eV for as-deposited and 700 °C annealed sample by X-ray photoelectron spectroscopy analysis. Several surface treatments were also carried out to determine their effect on ρc, among which HNO3 vapor treated sample indicates a lower value of 5.32 × 10-6 Ω cm2. © 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:175 / 179
页数:4
相关论文
共 50 条
  • [1] Palladium Ohmic contact on hydrogen-terminated single crystal diamond film
    Wang, W.
    Hu, C.
    Li, F. N.
    Li, S. Y.
    Liu, Z. C.
    Wang, F.
    Fu, J.
    Wang, H. X.
    DIAMOND AND RELATED MATERIALS, 2015, 59 : 90 - 94
  • [2] Ohmic contact between iridium film and hydrogen-terminated single crystal diamond
    Yan-Feng Wang
    Xiaohui Chang
    Shuoye Li
    Dan Zhao
    Guoqing Shao
    Tianfei Zhu
    Jiao Fu
    Pengfei Zhang
    Xudong Chen
    Fengnan Li
    Zongchen Liu
    Shuwei Fan
    Renan Bu
    Feng Wen
    Jingwen Zhang
    Wei Wang
    Hong-Xing Wang
    Scientific Reports, 7
  • [3] Ohmic contact between iridium film and hydrogen-terminated single crystal diamond
    Wang, Yan-Feng
    Chang, Xiaohui
    Li, Shuoye
    Zhao, Dan
    Shao, Guoqing
    Zhu, Tianfei
    Fu, Jiao
    Zhang, Pengfei
    Chen, Xudong
    Li, Fengnan
    Liu, Zongchen
    Fan, Shuwei
    Bu, Renan
    Wen, Feng
    Zhang, Jingwen
    Wang, Wei
    Wang, Hong-Xing
    SCIENTIFIC REPORTS, 2017, 7
  • [4] Ohmic Contact of Pt/Au on Hydrogen-Terminated Single Crystal Diamond
    Zhang, Minghui
    Lin, Fang
    Wang, Wei
    Li, Fengnan
    Wang, Yan-Feng
    Abbasi, Haris Naeem
    Zhao, Dan
    Chen, Genqiang
    Wen, Feng
    Zhang, Jingwen
    Bu, Renan
    Wang, Hongxing
    COATINGS, 2019, 9 (09)
  • [5] Palladium forms Ohmic contact on hydrogen-terminated diamond down to 4K
    Xing, Kaijian
    Tsai, Alexander
    Rubanov, Sergey
    Creedon, Daniel L.
    Yianni, Steve A.
    Zhang, Lei
    Hao, Wei-Chang
    Zhuang, Jincheng
    McCallum, Jeffrey C.
    Pakes, Christopher I.
    Qi, Dong-Chen
    APPLIED PHYSICS LETTERS, 2020, 116 (11)
  • [6] Palladium Ohmic contact on hydrogen-terminated single crystal diamond film (Reprinted from Diamond and Related Materials, vol 59, pg 90-94, 2015)
    Wang, W.
    Hu, C.
    Li, F. N.
    Li, S. Y.
    Liu, Z. C.
    Wang, F.
    Fu, J.
    Wang, H. X.
    DIAMOND AND RELATED MATERIALS, 2016, 63 : 175 - 179
  • [7] Annealing Temperature on Contact Properties between Nickel Film and Hydrogen-Terminated Single Crystal Diamond
    Zhang, Pengfei
    Zhang, Shaopeng
    Chen, Weidong
    Yan, Shufang
    Ma, Wen
    Wang, Hong-Xing
    COATINGS, 2020, 10 (09)
  • [8] Determination of the barrier height of iridium with hydrogen-terminated single crystal diamond
    Wang, Yan-Feng
    Wang, Wei
    Chang, Xiaohui
    Wang, Juan
    Fu, Jiao
    Zhu, Tianfei
    Liu, Zongchen
    Liang, Yan
    Zhao, Dan
    Liu, Zhangcheng
    Zhang, Minghui
    Wang, Kaiyue
    Wang, Hong-Xing
    Wang, Ruozheng
    MRS COMMUNICATIONS, 2019, 9 (01) : 165 - 169
  • [9] Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs
    Liu, Jiangwei
    Ohsato, Hirotaka
    Da, Bo
    Koide, Yasuo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (03) : 1181 - 1185
  • [10] Determination of the barrier height of iridium with hydrogen-terminated single crystal diamond
    Yan-Feng Wang
    Wei Wang
    Xiaohui Chang
    Juan Wang
    Jiao Fu
    Tianfei Zhu
    Zongchen Liu
    Yan Liang
    Dan Zhao
    Zhangcheng Liu
    Minghui Zhang
    Kaiyue Wang
    Hong-Xing Wang
    Ruozheng Wang
    MRS Communications, 2019, 9 : 165 - 169