Presence of defects and impurity composition of semiconducting diamonds grown under the temperature gradient conditions

被引：0
|
作者：
Novikov, N.V. [1 ]
Nachal'naya, T.A. [1 ]
Ivakhnenko, S.A. [1 ]
Zanevskij, O.A. [1 ]
Belousov, I.S. [1 ]
Malogolovets, V.G. [1 ]
Podzyarej, G.A. [1 ]
Romanko, L.A. [1 ]
机构：
[1] Inst. Sverkhtverdykh Materialov, NAN Ukrainy, Kiev, Ukraine
来源：
Sverkhtverdye Materialy | 2002年 / 05期
关键词：
Cathodoluminescence - Crystal defects - Crystals - Paramagnetic resonance - Semiconductor materials - Thermal effects;
D O I：
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中图分类号：
学科分类号：
摘要：
The large (6 mm) monocrystals of semiconducting synthetic diamonds were studied that were grown by the method of temperature gradient. Their impurity-defect composition and the main electrically active impurities distribution were studied using the methods of electron paramagnetic resonance, IR spectroscopy and cathodoluminescence. The volt-ampere characteristics and the temperature electric conductivity were measured.
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页码：40 / 47
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