Fabrication and electrical characterization of p-ZnIn2Se4/n-Si heterojunction diode structure

被引：9

作者：

Dhruv D.K. ^{[1
]}

Patel B.H. ^{[1
]}

Lakshminarayana D. ^{[1
]}

机构：

[1] Department of Electronics, Sardar Patel University, Vallabh Vidyanagar

来源：

Materials Research Innovations | 2016年 / 20卷 / 04期

关键词：

Energy band diagram; Flash evaporation; I-V and C-V characteristics; P-ZnIn[!sub]2[!/sub]Se[!sub]4[!/sub]/n-Si heterojunction; Photovoltaic effect;

D O I：

10.1080/14328917.2015.1131919

中图分类号：

学科分类号：

摘要：

Semiconducting thin films of p-ZnIn2Se4 were deposited on a crystalline n-silicon (Si) substrate by a flash evaporation technique. A heterojunction diode comprising of Au/p-ZnIn2Se4/n-Si/Al structure was fabricated. The heterojunction was subjected to current (I)-voltage (V) and capacitance (C)-voltage (V) characterization. The p-ZnIn2Se4/n-Si heterojunction showed behaviour typical of a p-n junction diode. The heterojunction diode ideality factor, rectification ratio, barrier height and carrier concentration were determined from the I-V and C-V measurements. At lower applied voltages, the electrical conduction was found to take place by thermionic emission whereas at higher voltages, a space charge-limited conduction mechanism was observed. A theoretical energy band diagram was constructed for the fabricated p-ZnIn2Se4/n-Si heterojunction on the basis of Anderson's model. The photovoltaic behaviour of the fabricated heterojunction was also investigated and the results were reported. © 2016 Informa UK Limited, trading as Taylor & Francis Group.

引用

页码：285 / 292

页数：7

共 22 条

[1]

Sze S.M., Physics of Semiconductor Devices, (1981)

[2]

Weast R.C., CRC Handbook of Chemistry and Physics, pp. E81-E82, (1981)

[3]

Filipowicz J., Romeo N., Tarricone L., Solid State Commun, 38, pp. 619-623, (1980)

[4]

Tomar M.S., Garcia F.J., Thin Solid Films, 69, pp. 137-139, (1980)

[5]

Shionoya S., Tamoto Y., J. Phys. Soc. Jpn, 19, pp. 1142-1146, (1964)

[6]

Dhruv D.K., Patel B.H., Int. J. Appl. Sci. Eng. Res, 3, pp. 121-128, (2014)

[7]

Dhruv D.K., Nowicki A., Patel B.H., Dhamecha V.D., Surf. Eng, 31, pp. 556-562, (2015)

[8]

Zeyada H.M., Aziz M.S., Behairy A.S., Physica B, 404, pp. 3957-3963, (2009)

[9]

Makino T., Kato H., Ogura M., Watanabe H., Sung-Gi R., Yamasaki S., Okushi H., Jpn. J. Appl. Phys, 44, pp. L1190-L1192, (2005)

[10]

Ashery A., Farag A.A.M., Salem M.A., Microelectron. Eng, 85, pp. 2309-2315, (2008)

← 1 2 3 →