Visualizing Ultrafast Photogenerated Electron and Hole Separation in Facet-Engineered Bismuth Vanadate Crystals

被引:11
作者
Sun, Fengke [1 ,2 ]
Deng, Yuting [2 ,3 ]
Leng, Jing [1 ]
Shi, Ming [3 ]
Li, Can [3 ]
Jin, Shengye [1 ]
Li, Rengui [3 ]
Tian, Wenming [1 ]
机构
[1] Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Dalian Natl Lab Clean Energy, iChEM Collaborat Innovat Ctr Chem Energy Mat, State Key Lab Catalysis,Dalian Inst Chem Phys, Dalian 116023, Peoples R China
基金
中国国家自然科学基金;
关键词
CHARGE-TRANSFER; RENORMALIZATION; TRANSPORT; DYNAMICS;
D O I
10.1021/jacs.4c10962
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Photogenerated charge separation is pivotal for effecting efficient photocatalytic reactions. Understanding this process with spatiotemporal resolution is vital for devising highly efficient photocatalysts. Here, we employed pump-probe transient reflection microscopy to directly observe the temporal and spatial evolution of photogenerated electrons and holes on the surface of facet-engineered bismuth vanadate (BiVO4) crystals. The findings suggest that the anisotropic built-in field of BiVO4 crystals propels the separation of photogenerated electrons and holes toward different facets through a two-step process across varying time scales. Photogenerated electrons and holes undergo ultrafast separation within similar to 6 ps, with electrons transforming into localized small polarons toward the {010} facets of truncated BiVO4 octahedral crystals. However, the photogenerated holes prolong their separation up to similar to 2000 ps in a drift-diffusion manner before ultimately accumulating on the {120} facets. This work provides a comprehensive visualization of spatiotemporal charge separation at the nano/microscale on semiconductor photocatalysts, which is beneficial for understanding the photocatalysis mechanism.
引用
收藏
页码:31106 / 31113
页数:8
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