Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration

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20143818167116
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(1) Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan; (2) Toray Engineering, 1-45, Oe 1-chome, Otsu, Shiga 520-2141, Japan; (3) Toray Industries Inc., Electronic and Imaging Materials Res. Labs., 3-1-2 Sonoyama, Otsu, Shiga 520-0842, Japan; (4) National Institute for Material Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan | 1600年 / Technology Society; The IEEE Components, Packaging, and Manufacturing卷 / IEEE Computer Society期
关键词：
In this study; we developed 8 μm-pitch microbump bonding and encapsulating by hybrid Cu/Sn-adhesive bonding technology. As an adhesive material; we used a non-conductive film (NCF). To realize simultaneous bonding of a metal and an adhesive; planar structure was formed by chemical mechanical polishing (CMP). After the planarization; hybrid bonding was carried out at 250 °C for 60 s. From scanning electron microscopic (SEM) observation of the bonded sample; it was confirmed that 8 μm-pitch bump bonding and the NCF filling 2.5-μm gap between the chip and substrate were performed at the same time. This result indicated that hybrid bonding was effective in fine-pitch bonding and encapsulating for future three-dimensional (3D) integration. © 2014 IEEE;
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