High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining

被引：0
作者：
Zhao Y. [1 ]
Tong C. [2 ]
Wei Z. [1 ]
机构：
[1] Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun
[2] State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2024年 / 45卷 / 03期
基金：
中国国家自然科学基金;
关键词：
beam combining; external cavity; semiconductor laser;
D O I：
10.37188/CJL.20240033
中图分类号：
学科分类号：
摘要：
A 808 nm semiconductor laser was applied to a mode-selected and beam waist splitting polarization combining external cavity. A laser with high beam quality high brightness and narrow-linewidth was obtained. The beam quality of the fast and slow axes of the obtained laser was M2=1. 85×18. 2，the slow axis beam quality was improved by 48%. The output power and brightness of the laser was 5. 08 W and B=22. 74 MW·cm-2·sr-1 respectively. The brightness was 1. 3 times that of the laser under free running. The spectral linewidth of obtained laser was 0. 47 nm，0. 14 times compressed to the same laser. © 2024 Editorial Office of Chinese Optics. All rights reserved.
引用
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页码：500 / 505
页数：5
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