New development of semiconductor laser application in thin-film crystal growth

被引：0

作者：

School of Frontier Sciences, University of Tokyo, CREST-JST, 5-1-5 Kashiwanoha, Kashiwa 277-8568, Japan ^{[1
]}

不详 ^{[2
]}

机构：

[1] School of Frontier Sciences, University of Tokyo, CREST-JST, Kashiwa 277-8568

[2] WPI Advanced Institute for Materials Research, Tohoku University, CREST-JST, Aoba, Sendai 980-8577

来源：

IEEJ Transactions on Electronics, Information and Systems | 2008年 / 128卷 / 05期

关键词：

Laser heating; Oxides; Semiconductor laser; Thin film synthesis; ZnO; π-conjugated organic compounds;

D O I：

10.1541/ieejeiss.128.699

中图分类号：

学科分类号：

摘要：

We describe the use of continuous-wave semiconductor diode laser beam as a heating source in thin film deposition system. One of the examples is heating of organic materials for sublimation to replace conventional Knudsen cell. The other is heating of the substrate to very high temperature (>1000°C) which can hardly be achieved by conventional resistive or lamp heaters. Many of the advantages come from the pin-point heating on demand that is enabled by the excellent directionality of high power laser beam. © 2008 The Institute of Electrical Engineers of Japan.

引用

页码：699 / 702

页数：3

共 6 条

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