High quality GaN grown by raised-pressure HVPE

被引：0

作者：

Bohyama, S. ^{[1
]}

Yoshikawa, K. ^{[1
]}

Naoi, H. ^{[2
]}

Miyake, H. ^{[1
]}

Hiramatsu, K. ^{[1
]}

Iyechika, Y. ^{[3
]}

Maeda, T. ^{[3
]}

机构：

[1] Dept. of Elec. and Electron. Eng., Faculty of Engineering, Mie University, 1515 Kamihama, Tsu-shi, Mie 514-8507, Japan

[2] Satellite Venture Business Lab., Mie University, 1515 Kamihama, Tsu-shi, Mie 514-8507, Japan

[3] Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan

来源：

Physica Status Solidi (A) Applied Research | 2002年 / 194卷 / 2 SPEC.期

关键词：

Chemical reactors - Cracks - Hydrides - Partial pressure - Pressure effects - Reaction kinetics - Sapphire - Vapor phase epitaxy - X ray diffraction analysis;

D O I：

10.1002/1521-396X(200212)194:23.0.CO;2-7

中图分类号：

学科分类号：

摘要：

Effects of reactor pressure on growth of GaN by hydride vapour phase epitaxy (HVPE) have been investigated. For growth at 0.4 atm for 1 h, a large number of cracks were observed in GaN layers with the thickness about 30 μm and the FWHM values in (0004) and (10-10) X-ray rocking curves (XRCs) were larger than 350 arcsec. For growth at 1.2 atm for 1 h, GaN layers with the thickness about 60 μm were free from cracks and the FWHMs in both (0004) and (10-10) XRC were dramatically reduced to narrower than 200 arcsec.

引用

页码：528 / 531

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