15 kV SiC MOSFET: An enabling technology for medium voltage solid state transformers

被引：137

作者：

Huang, Alex Q. ^{[1
]}

Zhu, Qianlai ^{[1
]}

Wang, Li ^{[1
]}

Zhang, Liqi ^{[1
]}

机构：

[1] FREEDM Systems Center, North Carolina State University, Raleigh, United States

来源：

CPSS Transactions on Power Electronics and Applications | 2017年 / 2卷 / 02期

关键词：

DC-DC converters - Electric power transmission networks - Wide band gap semiconductors - Energy gap - MOSFET devices - Efficiency - Electric inverters - Rectifying circuits - Silicon carbide;

D O I：

10.24295/CPSSTPEA.2017.00012

中图分类号：

学科分类号：

摘要：

Due to much higher achievable blocking voltage and faster switching speed, power devices based on wide band-gap (WBG) silicon carbide (SiC) material are ideal for medium voltage (MV) power electronics applications. For example, a 15 kV SiC MOSFET allows a simple and efficient two-level converter configuration for a 7.2 kV solid state transformer (SST) for smart grid applications. Compared with multilevel input series and output parallel (ISOP) solution, this approach offers higher efficiency and reliability, reduced system weight and cost by operating at medium to high switching frequency. However, the main concern is how to precisely implement this device in different MV applications, achieving highest switching frequency while maintaining good thermal performance. This paper reviews the characteristics of 15 kV SiC MOSFET and offers a comprehensive guideline of implementing this device in practical MV power conversion scenarios such as AC-DC, DC-DC and AC-AC in terms of topology selection, loss optimization and thermal management. © 2017 IEEE. All rights reserved.

引用

页码：118 / 130