Beveling of silicon carbide wafer by plasma etching using atmospheric-pressure plasma

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Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan [1 ]
不详 [2 ]
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来源：
Jpn. J. Appl. Phys. | / 8 PART 2卷
关键词：
443.1 Atmospheric Properties - 701.1 Electricity: Basic Concepts and Phenomena - 714.2 Semiconductor Devices and Integrated Circuits - 801.1 Chemistry; General - 802.2 Chemical Reactions - 804.2 Inorganic Compounds - 932.3 Plasma Physics;
D O I：
08JJ03
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