Damage profiles in high-energy As implanted Si

被引:0
|
作者
机构
来源
| 1600年 / American Institute of Physics Inc.卷 / 88期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Annealing of silica glasses implanted with high-energy copper ions
    Nakao, S
    Miyagawa, Y
    Saitoh, K
    Ikeyama, M
    Niwa, H
    Tanemura, S
    Miyagawa, S
    Tazawa, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12B): : 7681 - 7685
  • [42] Luminescence centers in high-energy ion-implanted silicon
    Terashima, E
    Ikarashi, T
    Watanabe, M
    Kitano, T
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 587 - 592
  • [43] REDISTRIBUTION OF PHOSPHORUS IN HIGH-ENERGY ION-IMPLANTED SILICON
    KATO, J
    YONENAGA, T
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4311 - 4312
  • [44] Bubble morphology in U3Si2 implanted by high-energy Xe ions at 300 °C
    Miao, Yinbin
    Harp, Jason
    Mo, Kun
    Zhu, Shaofei
    Yao, Tiankai
    Lian, Jie
    Yacout, Abdellatif M.
    JOURNAL OF NUCLEAR MATERIALS, 2017, 495 : 146 - 153
  • [45] Microstructure investigations of U3Si2 implanted by high-energy Xe ions at 600 °C
    Miao, Yinbin
    Harp, Jason
    Mo, Kun
    Kim, Yeon Soo
    Zhu, Shaofei
    Yacout, Abdellatif M.
    JOURNAL OF NUCLEAR MATERIALS, 2018, 503 : 314 - 322
  • [46] Energy dependence of radiation damage in Sb-implanted Si(100)
    Lai, YS
    Chen, JS
    Ho, YS
    Sun, HL
    Tsai, CJ
    Chen, TC
    Ko, YF
    Lee, FS
    You, WM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (07) : G511 - G516
  • [47] Lattice deformation studies in silicon implanted with high-energy protons
    Wieteska, K
    Dluzewska, K
    Wierzchowski, W
    ACTA PHYSICA POLONICA A, 1996, 89 (03) : 395 - 400
  • [48] DEFECTS PRODUCED BY HIGH-ENERGY OXYGEN IONS IMPLANTED IN SILICON
    GROB, A
    GROB, JJ
    PERIO, A
    THEVENIN, P
    SIFFERT, P
    ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 197 - 204
  • [49] Luminescence centers in high-energy ion-implanted silicon
    Terashima, Koichi
    Ikarashi, Taeko
    Watanabe, Masahito
    Kitano, Tomohisa
    Materials Science Forum, 1997, 258-263 (pt 1): : 587 - 592
  • [50] Investigation of defects in high-energy heavy ion implanted GaAs
    Chen, ZQ
    Wang, Z
    Wang, SJ
    Hou, MD
    APPLIED RADIATION AND ISOTOPES, 2000, 52 (01) : 39 - 45