Fermi level influence on the adsorption at semiconductor surfaces - Ab initio simulations

被引：0

作者：

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland ^{[1
]}

不详 ^{[2
]}

机构：

[1] [1,Krukowski, Stanislaw

[2] Kempisty, Pawel

[3] StrĄk, Pawel

来源：

Krukowski, S. (stach@unipress.waw.pl) | 1600年 / American Institute of Physics Inc.卷 / 114期

关键词：

Charge transfer;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

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