Fermi level influence on the adsorption at semiconductor surfaces - Ab initio simulations

被引：0

作者：

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland ^{[1
]}

不详 ^{[2
]}

机构：

[1] [1,Krukowski, Stanislaw

[2] Kempisty, Pawel

[3] StrĄk, Pawel

来源：

Krukowski, S. (stach@unipress.waw.pl) | 1600年 / American Institute of Physics Inc.卷 / 114期

关键词：

Charge transfer;

D O I：

暂无

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学科分类号：

摘要：

Journal article (JA)

引用

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[1] Fermi level influence on the adsorption at semiconductor surfaces-ab initio simulations
Krukowski, Stanislaw
Kempisty, Pawel
Strak, Pawel
JOURNAL OF APPLIED PHYSICS, 2013, 114 (06)
[2] FERMI LEVEL STABILIZATION AT SEMICONDUCTOR SURFACES
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SURFACE SCIENCE, 1965, 3 (02) : 189 - &
[3] Ab initio calculation of phonons in semiconductor surfaces
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[4] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES
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[7] Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models
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[8] Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models
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JOURNAL OF APPLIED PHYSICS, 2013, 114 (14)
[9] FERMI LEVEL STABILIZATION AT CESIATED SEMICONDUCTOR SURFACES
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[10] Ab initio molecular dynamics simulations of reactions at surfaces
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