Epitaxial growth and defect control of SiC for high-voltage power devices

被引：1

作者：

Kimoto T. ^{[1
]}

Suda J. ^{[1
]}

机构：

[1] Department of Electronic Science and Engineering, Kyoto University, Nishikyo, Kyoto 615-8510, Al-301, Katsura

来源：

Journal of the Vacuum Society of Japan | 2011年 / 54卷 / 06期

关键词：

Basal plane dislocations - Fast epitaxial growths - High growth rate - High voltage power - Low energy electron irradiation - Silicon carbides (SiC) - Thermal oxidation - Threading edge dislocation;

D O I：

10.3131/jvsj2.54.362

中图分类号：

学科分类号：

摘要：

Recent progress in fast epitaxial growth and defect control of silicon carbide (SiC) toward development of high-voltage power devices is reviewed. In chemical vapor deposition of 4H-SiC on off-axis (0001), a high growth rate of 85 μm/h and a low background doping of 1 × 10 13 cm -3 are achieved. Conversion of basal-plane dislocations to threading edge dislocations and generation of stacking faults during epitaxial growth are discussed. Deep levels in as-grown n-type and p-type 4H-SiC epitaxial layers have been investigated. A lifetime-killing defect, Z 1/2 center, can be almost eliminated by thermal oxidation, which leads to significant increase in carrier lifetimes. The obtained carrier lifetimes are long enough to fabricate 10 kV-class bipolar devices. Control of carrier lifetimes by lowenergy electron irradiation is demonstrated.

引用

页码：362 / 368

页数：6