Fabrication and field emission properties of surface-coduction electron-emission source based on planar-gate triode with SnO2 film

被引:0
作者
Zhang, Yongai [1 ]
Lin, Tihang [1 ]
Zeng, Xiangyao [1 ]
Zhang, Jie [1 ]
Zhou, Xiongtu [1 ]
Guo, Tailiang [1 ]
机构
[1] School of Physics and Information Engineering, Fuzhou University
来源
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2013年 / 33卷 / 12期
关键词
Electron emission source; Planar-gate; SnO[!sub]2[!/sub] film; Surface-conduction;
D O I
10.3969/j.issn.1672-7126.2013.12.09
中图分类号
学科分类号
摘要
The surface-conduction electron-emission source, based on planar-gate triode with SnO2 film emitters, has been successfully fabricaed on glass substrate by magnetron sputtering, photolithography, and lift-off technology. The microstructures and field emission characteristics were characterized with scanning electron microscopy (SEM) and optical microscopy. Theresults show that the islands of tin oxide, about 100~300 nm in diameter, were depostied at the gap between the cathode and gate electrode, and that the gate voltage was capable of effectively controlling the emission and conduction currents. The electron-emission efficiency was found to be around 0.85% and the maximun brightness could reach 850 cd/m2, indicating that the SnO2 film may be a good material for fabrication of surface-conduction electron-conduction electron-emission source based on planar-gate triode.
引用
收藏
页码:1214 / 1218
页数:4
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